Memory arrays rely on highly regular cell structures combined with carefully designed peripheral circuits. SRAM uses cross-coupled storage nodes for fast embedded memory, while DRAM uses capacitor-based storage to achieve much higher density. Wordline decoding, bitline precharge, write driving, differential sensing, column multiplexing, and hierarchical array organization determine practical access time, power consumption, and silicon area. Large arrays require banks and subarrays to limit interconnect capacitance, while multiported memories introduce additional wordlines, bitlines, and routing for parallel access. Different storage technologies solve different system requirements. ROM provides compact fixed storage, programmable ROM technologies introduce fuse- and floating-gate-based programming, and NAND Flash combines series-connected floating-gate cells with page programming and block erase for extremely low cost per bit. Embedded DRAM provides a denser alternative to SRAM when additional process support is available. Serial-access structures such as shift registers, FIFO queues, and LIFO stacks replace arbitrary addressing with controlled data order, while CAM performs paral...